Cover for C,H,N and O in Si and Characterization and Simulation of Materials and Processes

C,H,N and O in Si and Characterization and Simulation of Materials and Processes

A volume in European Materials Research Society Symposia Proceedings

Book1996

Edited by:

A. BORGHESI, U.M. GÖSELE, ... A.M. GUÉ

C,H,N and O in Si and Characterization and Simulation of Materials and Processes

A volume in European Materials Research Society Symposia Proceedings

Book1996

 

Cover for C,H,N and O in Si and Characterization and Simulation of Materials and Processes

Edited by:

A. BORGHESI, U.M. GÖSELE, ... A.M. GUÉ

About the book

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Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nit ... read full description

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  2. Book chapterNo access

    Author Index of Volume 36

    Pages 295-296

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    Subject Index of Volume 36

    Pages 297-301

  4. Book chapterNo access

    Author Index of Volume 37

    Pages 251-252

  5. Book chapterNo access

    Subject Index of Volume 37

    Pages 253-256

About the book

Description

Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.

The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.

The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Details

ISBN

978-0-444-82413-4

Language

English

Published

1996

Copyright

Copyright © 1996 Elsevier B.V. All rights reserved.

Imprint

North Holland

Editors

A. BORGHESI

Università degli Studi di Modena, Italy

U.M. GÖSELE

Max-Planck-Institute of Microstructure Physics, Halle/Saale, Germany

J. VANHELLEMONT

IMEC, Leuven, Belgium

M. DJAFARI-ROUHANI

LAAS - CNRS, Toulouse, France

A.M. GUÉ

LAAS - CNRS, Toulouse, France